Tailoring Femtosecond?Laser Processed Black Silicon for Reduced Carrier Recombination Combined with >95% Above?Bandgap Absorption
نویسندگان
چکیده
The femtosecond-pulsed laser processed black silicon (fs-bSi) features high absorptance in a wide spectral range but suffers from amount of induced damage as compared with bSi fabricated by other methods. Here, the aim is to minimize charge carrier recombination fs-bSi caused indicated sub-bandgap absorption and quantified lifetime, while maintaining above bandgap. effect parameters, including focal position, average power, scan speed are systematically studied characterizing surface morphology, spectra, minority-carrier lifetime. For passivation fs-bSi, well-established atomic layer deposited (ALD) Al2O3 used. results show that tailored about 96% visible minority lifetime 54 ?s at injection level ?n = 1 · 1015 cm?3 can be obtained simultaneously. This work paves way toward high-performance broadband optoelectronic devices based on passivated fs-bSi.
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ژورنال
عنوان ژورنال: Advanced photonics research
سال: 2022
ISSN: ['2699-9293']
DOI: https://doi.org/10.1002/adpr.202100234